John D. Cressler

School of Electrical and Computer Engineering
777 Atlantic Drive N.W.
The basic thrust of Professor Cressler's research is in the understanding, optimization, and utilization of silicon-based heterostructure devices, circuits, and systems for next-generation, performance-constrained, communications applications within the global electronics infrastructure. He and his team attempt to break the business-as-usual mold in this field and reimagine the way electronics in the 21st century can and should be practiced. To do this, his team specializes in emerging mixed-signal (i.e., RF, microwave, mm-wave, analog, and digital) integrated circuit technologies utilizing atomic-scale bandgap engineering with silicon-germanium (SiGe) alloys. His research focus is heavily on SiGe heterojunction bipolar transistor (HBT) technology, a silicon foundry compatible integrated circuit technology possessing unprecedented levels of performance (greater than 500 GHz peak frequency response in 2013), enabling a host of potentially paradigm-shifting applications in the realms of wired and wireless communications, radar systems, imaging/sensor technologies, and a broad spectrum of possibilities in so-called “extreme environments.”